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MITSUBISHI HVIGBT MODULES
CM400HG-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CM400HG-66H
q IC ................................................................... 400A q VCES ....................................................... 3300V q High Insulated Type q 1-element in a Pack q AISiC Baseplate
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
73±0.5 57±0.25 2 - M8 NUTS Dimensions in mm
29.7
2
17±0.1
(2) C
124±0.25
140±0.5
44±0.3
1
(1) E E
G C
36
E G C
CIRCUIT DIAGRAM
5 21.6±0.3 12.9±0.3
4 - φ 7 MOUNTING HOLES
16.2±0.3
screwing depth min. 4
screwing depth min. 16.5
41±0.5 22±0.3
17.4±0.3 2.
CM400HG-66H Datasheet
