MA1046-1 - For 1.9 GHz - Power Amplifier
The MA1046-1 is a 1.9 GHz band power amplifier (Po = +3.1W), constructed by 3 stages of GaAs MESFET, RF matching circuit, and DC bias circuit.
The shield cap is made of metal.
Input and Output impedances are designed to 50Ω.
OUTLINE DRAWING 62 Max.
57 1.8 3.6 21 Max.
2 25 Max.
MA1046-1 10 a 0.5
MA1046-1 For 1.9 GHz - Power Amplifier MA1046-1 2.
Electrical Performances (Tc = +25°C, VD 1, 2 = 6V, VD3 = 10V, VG 1, 2 = 5V, VG 3 = 3V, Zg = Zl = 50Ω) No.
1 Items Frequency Power Gain Temperature Characteristics (Power Gain) Gain Variation Drain Current Gate Current ACP ∆ 600 kHz ∆ 900 kHz 8 9 10 Occupied Band Width Input VSWR Spurious In Band Out Band 2 nd 3 rd 11 12 Stability against load variation Intensity against load variation ∆G ID 12 ID 3 6 7 IG 12 IG 3 ACP1 ACP2
MA1046-1 Features
* Po = +35.0 dBm, Gain = +32 dB (min.) @1.9 GHz Vd1, 2 = +6.0V, Vd3 = +10.0V Vg1, 2 =
* 5.0V, Vg3 = 3.0V 2 8 5 5 10 5 5 10 5 8 1 RF IN 1.2 50 Max. 2 GND 3 VG12 4 VD12 5 GND 6 VG3 7 VD3 8 RF OUT 9 GND (base) 8 Max. 2.5 Unit : mm APPLICATION Power amplifier for PHS base station/Japan. No
