RA60H1317M Datasheet (Mitsubishi Electric)

RA60H1317M, Silicon RF Power Modules

The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range.

The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors.

Without the gate voltage (VGG=0V), only a small leakage current flows into the

RA60H1317M Features

* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)

* Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW

* Broadband Frequency Range: 135-175MHz

* Low-Power Control Current IGG=1mA (typ) at VGG=5V

* Module Size: 66 x 21 x 9.88 mm

* Linear ope