RA60H1317M - Silicon RF Power Modules

Product Overview

Mitsubishi Electric

Part number	RA60H1317M
Manufacturer	Mitsubishi Electric
File Size	234.39 KB
Description	Silicon RF Power Modules
Datasheet	RA60H1317M Datasheet
Additional preview pages of the RA60H1317M datasheet.

The RA60H1317M is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range.

Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V).
Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW.
Broadband Frequency Range: 135-175MHz.
Low-Power Control Current IGG=1mA (typ) at VGG=5V.
Module Size: 66 x 21 x 9.88 mm.
Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power 2 3 1 4 5 1 2 3 4 5 RF Input (Pin) Gate Voltage (VGG), Power.

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Published: Feb 16, 2007 |