RA60H4452M1
Key Features
- Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
- Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
- Broadband Frequency Range: 440-520MHz
- Metal shield structure that makes the improvements of spurious radiation simple
- Low-Power Control Current IGG=5mA (typ) @ VGG=5V
- Module Size: 67 x 18 x 9.9 mm
- Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power. 1 4 5
