RA60H4452M1

Silicon RF Power Modules

Mitsubishi Electric

RA60H4452M1 Features

* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)

* Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW

* Broadband Frequency Range: 440-520MHz

* Metal shield structure that makes the improvements of spurious www.DataSheet4U.com radiation simple

* L

RA60H4452M1 General Description

The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the.

RA60H4452M1 Datasheet (229.50 KB)

RA60H4452M1 Datasheet Preview — Preview of RA60H4452M1 PDF

Datasheet Details

Part number:

RA60H4452M1

Manufacturer:

Mitsubishi Electric

File Size:

229.50 KB

Description:

Silicon rf power modules.
MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4452M1 BLOCK DIAGRAM 2 3 RoHS Compliance, 440-520MHz 60.

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RA60H4452M1 Silicon Power Modules Mitsubishi Electric

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RA60H4452M1 Features

RA60H4452M1 General Description

Datasheet Details

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