RA60H4452M1 Datasheet - Mitsubishi Electric

RA60H4452M1 Silicon RF Power Modules

The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the.

RA60H4452M1 Features

* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)

* Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW

* Broadband Frequency Range: 440-520MHz

* Metal shield structure that makes the improvements of spurious www.DataSheet4U.com radiation simple

* L

RA60H4452M1 Datasheet (229.50 KB)