RA60H4452M1 Silicon RF Power Modules

Mitsubishi Electric

Description

MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H4452M1 BLOCK DIAGRAM 2 3 RoHS Compliance, 440-520MHz 60.
The RA60H4452M1 is a 60-watt RF MOSFET Amplifier Module for 12.

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Datasheet Specifications

Part number: RA60H4452M1
Manufacturer: Mitsubishi Electric
File Size: 229.50 KB
Datasheet: RA60H4452M1_MitsubishiElectric.pdf
Description: Silicon RF Power Modules

Features

* Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
* Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
* Broadband Frequency Range: 440-520MHz
* Metal shield structure that makes the improvements of spurious www. DataSheet4U. com radiation simple
* L

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