Part number:
RD12MVS1
Manufacturer:
Mitsubishi Electric
File Size:
428.63 KB
Description:
Silicon rf power mos fet.
* High Power Gain: Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz High Efficiency: 57%typ. (175MHz) APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD12MVS1 is EU RoHS compliant product. RoHS compliant product is indicating by the letter “ZG” after the Lot
RD12MVS1 Datasheet (428.63 KB)
RD12MVS1
Mitsubishi Electric
428.63 KB
Silicon rf power mos fet.
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