RD12MVS1
DESCRIPTION
RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
OUTLINE DRAWING
FEATURES
High Power Gain: Pout>11.5W, Gp>12d B@Vdd=7.2V,f=175MHz
High Efficiency: 57%typ. (175MHz)
APPLICATION
For output stage of high power amplifiers in VHF band mobile radio sets.
Ro HS PLIANT
RD12MVS1 is EU Ro HS pliant product. Ro HS pliant product is indicating by the letter “ZG” after the Lot Marking.
ABSOLUTE MAXIMUM RATINGS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS
Drain to Source Voltage
VGS=0V
VGSS
Gate to Source Voltage
VDS=0V
ID Drain Current
Pin Input Power
Zg=Zl=50
Pch Channel Dissipation
Tc=25°C
Tj Junction Temperature
Tstg Storage Temperature
Rthj-c Thermal Resistance
Junction to Case
Note: Above parameters are guaranteed independently.
RATINGS 50
+/- 20 4 2 50
150...
