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RD12MVS1

Silicon RF Power MOS FET

RD12MVS1 Features

* High Power Gain: Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz High Efficiency: 57%typ. (175MHz) APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD12MVS1 is EU RoHS compliant product. RoHS compliant product is indicating by the letter “ZG” after the Lot

RD12MVS1 Datasheet (428.63 KB)

Preview of RD12MVS1 PDF

Datasheet Details

Part number:

RD12MVS1

Manufacturer:

Mitsubishi Electric

File Size:

428.63 KB

Description:

Silicon rf power mos fet.

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RD12MVS1 Silicon Power MOS FET Mitsubishi Electric

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