RD12MVS1 Datasheet, Fet, Mitsubishi Electric

RD12MVS1 Features

• Fet High Power Gain: Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz High Efficiency: 57%typ. (175MHz) APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMP

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RD12MVS1

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Mitsubishi Electric

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📄 Datasheet

Description:

Silicon rf power mos fet. RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. OUTLINE DRAWING FEATURES High

RD12MVS1 Application

• Applications OUTLINE DRAWING FEATURES High Power Gain: Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz High Efficiency: 57%typ. (175MHz) APPLICATION For o

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