* 9.6+/-0.3 0.1 -0.01 3 +0.05 R1.6+/-0.15 4.5+/-0.7 6.2+/-0.7 APPLICATION For output stage of high power amplifiers in 800-900MHz Band mobile radio sets. 5.0+/-0.3 18.5+/-0.3 PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) www.DataSheet4U.com SYMB
RD45HMF1 Datasheet (348.04 KB)
RD45HMF1
Mitsubishi Electric
348.04 KB
Silicon mosfet power transistor.
MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD45HMF1 25.0+/-0.3 7.0+/-0.5 11.0+/-0.3 1 Silicon MOSFET Po.
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