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M5M29FB800VP

8M-Bit BLOCK ERASE FLASH MEMORY

M5M29FB800VP Features

* 524,288 word x 16bit 1,048,576 word x 8 bit VCC = 3.3V±0.3V Supply voltage 80/100/120ns (Max) Access time Organization Power Dissipation 108 mW (Max.) Read 144 mW (Max.) Program/Erase 0.72 mW (Max.) Standby Deep power down mode 3.3µW (typ.) Auto program 7.5ms (typ.) Program Time 128word

M5M29FB800VP General Description

The MITSUBISHI M5M29FB/T800FP, VP, RV are 3.3V-only high speed 8,388,608-bit CMOS boot block Flash Memories suitable for mobile and personal computing, and communication products. The M5M29FB/T800FP, VP, RV are fabricated by CMOS technology for the peripheral circuits and DINOR(Divided bit line NOR).

M5M29FB800VP Datasheet (151.65 KB)

Preview of M5M29FB800VP PDF

Datasheet Details

Part number:

M5M29FB800VP

Manufacturer:

Mitsubishi

File Size:

151.65 KB

Description:

8m-bit block erase flash memory.
MITSUBISHI LSIs MITSUBISHI LSIs M5M29FB/T800FP,VP,RV-80,-10,-12 M5M29FB/T800FP,VP,RV-80,-10,-12 8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD .

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M5M29FB800FP 8M-Bit BLOCK ERASE FLASH MEMORY (Mitsubishi)

M5M29FB800FP-10 8M-Bit BLOCK ERASE FLASH MEMORY (Mitsubishi)

M5M29FB800FP-12 8M-Bit BLOCK ERASE FLASH MEMORY (Mitsubishi)

M5M29FB800FP-80 8M-Bit BLOCK ERASE FLASH MEMORY (Mitsubishi)

M5M29FB800RV-10 8M-Bit BLOCK ERASE FLASH MEMORY (Mitsubishi)

M5M29FB800RV-10 8 /388 /608-BIT (1048 /576-576-WORD BY 8-BIT / 524 /288-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY (Mitsubishi)

M5M29FB800RV-12 8M-Bit BLOCK ERASE FLASH MEMORY (Mitsubishi)

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M5M29FB800VP 8M-Bit BLOCK ERASE FLASH MEMORY Mitsubishi

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