Part number:
M5M5256DFP-10VLL-I
Manufacturer:
Mitsubishi
File Size:
44.19 KB
Description:
262144-bit (32768-word by 8-bit) cmos static ram.
M5M5256DFP-10VLL-I_MitsubishiElectricSemiconductor.pdf
Datasheet Details
The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology.
The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM.
Stand-by current is small eno
M5M5256DFP-10VLL-I Features
* CMOS STATIC RAM POWER DOWN CHARACTERISTICS (1) ELECTRICAL CHARACTERISTICS Symbol Vcc (PD) VI (/S) Icc (PD) (Ta = -40~85°C, Vcc=2.7~3.6V, unless otherwise noted) Parameter Power down supply voltage Chip select input /S Power down supply current Test conditions Min 2 2 -VLL -VXL Limits Typ Max
M5M5256DFP-10VLL-I_MitsubishiElectricSemiconductor.pdf
Datasheet Details
M5M5256DFP-10VLL-I
Mitsubishi
44.19 KB
262144-bit (32768-word by 8-bit) cmos static ram.
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