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M5M5256DVP-70VXL Datasheet - Mitsubishi

M5M5256DVP-70VXL 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small eno.

M5M5256DVP-70VXL Features

* n case of Ta = 25°C Note8: ICC (PD) = 0.2uA in case of Ta = 25°C (2) TIMING REQUIREMENTS (Ta = 0~70°C, Vcc=3.3±0.3V, unless otherwise noted ) Symbol tsu (PD) trec (PD) Parameter Power down set up time Power down recovery time Test conditions Min 0 Limits Typ Max Unit ns ns tCR (3) POW

M5M5256DVP-70VXL_MitsubishiElectricSemiconductor.pdf

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Datasheet Details

Part number:

M5M5256DVP-70VXL

Manufacturer:

Mitsubishi

File Size:

62.57 KB

Description:

262144-bit (32768-word by 8-bit) cmos static ram.

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M5M5256DVP-70VXL M5M5256DVP-70VXL 262144-BIT 32768-WORD 8-BIT CMOS STATIC RAM Mitsubishi

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