epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity pr
S30C100, MOSPEC
MOSPEC
Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry feature.
S30C100C, Mospec Semiconductor
MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epit.
S30C30, Mospec Semiconductor
MOSPEC
S30C30 thru S30C60
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art g.
S30C35, Mospec Semiconductor
MOSPEC
S30C30 thru S30C60
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art g.
S30C40, Mospec Semiconductor
MOSPEC
S30C30 thru S30C60
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art g.
S30C45, Mospec Semiconductor
MOSPEC
S30C30 thru S30C60
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art g.
S30C45C, MOSPEC
MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epit.
S30C45CL, Mospec Semiconductor
MOSPEC
Switchmode Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with high temperature operation metal. The properitary barrie.