2N6659
Motorola Inc
466.39 KB
Tmos switching fet transistors.
2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661
N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR
These TMOS Power FETs are designed. for h.
📁 Related Datasheet
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CASE~ (TO-3)
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TECHNICAL DATA
PNP DARLINGTON POWER SILICON TRANSISTOR
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MAXI.
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2N6383-2N6385 2N6648-2N6650
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Featur.
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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
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2N6653 - Bipolar NPN Device
(Seme LAB)
2N6653
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
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SavantIC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3 package ·High voltage capabili.
2N6653 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Voltage Capability ·High Current Current Capability ·Low Collector Saturation Voltage·High Switchi.
