2N6659 - TMOS SWITCHING FET TRANSISTORS
2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR These TMOS Power FETs are designed.
for high-current, high- speed power switching applications such as switching power sup- plies, ,CMOS logic, microprocessor or ~L-to-tiigh current .,interface and line drivers.
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0 Fast Switching Speed ton = toff = 5.0 ns Max 0 LOW an-Resistance 1.5 Ohm Typ 2N66591MPF6659 2.0 Ohm Typ 2N6660/2N6661 MP
