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0N05HDL MTP60N05HDL

0N05HDL Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA www.DataSheet4U.com Order this document by MTP60N05HDL/D Product Preview HDTMOS E-FET .™ Power Field Effect.

0N05HDL Features

* ansistor Device Data MTP60N05HDL V DS , DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) VGS, GATE
* TO
* SOURCE VOLTAGE (VOLTS) 8.0 VGS 6.0 QT 40 4.0 Q1 2.0 Q3 VDS 0 10 20 30 40 50 QG, TOTAL GATE CHARGE (nC) Q2 TJ = 60°C ID = 5.0 A 20 10 0 0 30 60 50 1000 VDD = 25 V ID = 60 A VGS = 5.0

0N05HDL Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

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Datasheet Details

Part number
0N05HDL
Manufacturer
Motorola
File Size
158.45 KB
Datasheet
0N05HDL_Motorola.pdf
Description
MTP60N05HDL

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