0N05HDL - MTP60N05HDL
MOTOROLA SEMICONDUCTOR TECHNICAL DATA www.DataSheet4U.com Order this document by MTP60N05HDL/D Product Preview HDTMOS E-FET .™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced high cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain to source diode with a fast recovery time.
Designed for low voltage, high speed
0N05HDL Features
* ansistor Device Data MTP60N05HDL V DS , DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) VGS, GATE
* TO
* SOURCE VOLTAGE (VOLTS) 8.0 VGS 6.0 QT 40 4.0 Q1 2.0 Q3 VDS 0 10 20 30 40 50 QG, TOTAL GATE CHARGE (nC) Q2 TJ = 60°C ID = 5.0 A 20 10 0 0 30 60 50 1000 VDD = 25 V ID = 60 A VGS = 5.0
