16N25E - MTB16N25E
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB16N25E/D Designer's TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount N Channel Enhancement Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities.
This advanced TMOS E FET is designed to wit
16N25E Features
* istance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize comm
