16N25E MTB16N25E

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB16N25E/D Designer's TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount .

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Datasheet Specifications

Part number: 16N25E
Manufacturer: Motorola
File Size: 198.77 KB
Datasheet: 16N25E_Motorola.pdf
Description: MTB16N25E

Features

* istance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize comm

Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS E
* FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain
* to
* source diode with a

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16N25E MTB16N25E Motorola

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