2N2359
Motorola
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Pnp germanium power transistors.
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2N2357 - PNP Germanium power transistors
(Motorola)
2N2357 thru 2N2359 (Germanium)
CASE 161 (TO-41)
Collector Connected to Case
PNP Germanium power transistors designed for very high-current switching .
2N2358 - PNP Germanium power transistors
(Motorola)
2N2357 thru 2N2359 (Germanium)
CASE 161 (TO-41)
Collector Connected to Case
PNP Germanium power transistors designed for very high-current switching .
2N2303 - Small Signal Transistors
(Central Semiconductor)
Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION
VCBO (V)
2N1975 NPN AMPL/SWITCH 2N1983 NPN AMPL/SWITCH 2N1984 NPN AMPL/SWITCH .
2N2303 - PNP SILICON ANNULAR TRANSISTORS
(Motorola)
2N722 (SILICON)
(2N1132 JAN AVAILABLE)
2Nl132 2Nl132A 2N2303
PNPSILICON SWITCHING TRANSISTORS
PNP SILICON ANNULAR TRANSISTORS designed for mediu.
2N2304 - (2N2xxx) Power Transistors
(API Electronics)
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2N2308 - (2N2xxx) Power Transistors
(API Electronics)
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2N2309 - Small Signal Transistors
(Central Semiconductor)
Small Signal Transistors TO-39 Case (Continued)
TYPE NO. DESCRIPTION
VCBO (V)
2N1975 NPN AMPL/SWITCH 2N1983 NPN AMPL/SWITCH 2N1984 NPN AMPL/SWITCH .
2N2322 - All-diffused PNPN thyristors
(Motorola)
2N2303 (SILICON) For Specifications, See 2N722 Data.
2N2322 thru 2N2326 {SILICON}
All-diffused PNPN thyristors designed for gating
operation in rnAI .
2N2322 - (2N2322 - 2N2326) SILICON THYRISTORS
(Comset Semiconductors)
2n2322 to 2n2326 SILICON THYRISTORS
All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits Compliance to Ro.
2N2322 - SILICON CONTROLLED RECTIFIER
(Central Semiconductor)
2N2322 2N2323 2N2324 2N2325
2N2326 2N2327 2N2328 2N2329
SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS
CentralTM
Semiconductor Corp.
DESC.
