2N3961
Motorola
252.93kb
Npn silicon rf power transistors.
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2N3960 - NPN Transistor
(Semicoa Semiconductor)
Data Sheet No. 2N3960
Type 2N3960
Geometry 0003 Polarity NPN Qual Level: JAN - JANTXV
Features: • • • • General-purpose low-power NPN silicon transis.
2N3960 - HIGH FREQUENCY TRANSISTOR
(Motorola)
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Total Device Dissipation (§ TA = 25°C
Derate above 25°C T.
2N3960 - NPN SILICON SWITCHING TRANSISTOR
(Microsemi)
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //.microsemi.
NPN SI.
2N3960UB - NPN SILICON SWITCHING TRANSISTOR
(Microsemi)
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //.microsemi.
NPN SI.
2N3962 - PNP SILICON TRANSISTOR
(Micro Electronics)
.
2N3962 - AMPLIFIER TRANSISTOR
(Motorola)
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation
@ .
2N3962 - PNP Silicon Transistor
(Solid State)
.
2N3962 - Bipolar PNP Device
(Seme LAB)
2N3962
Dimensions in mm (inches).
5.84 (0.230) 5.31 (0.209)
4.95 (0.195) 4.52 (0.178)
Bipolar PNP Device in a Hermetically sealed TO18
Metal Package.
2N3963 - Bipolar PNP Device
(Semelab Plc)
..
2N3963
Dimensions in mm (inches).
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)
Bipolar PNP Device in a Hermetically seal.
2N3963 - SILICON PNP TRANSISTORS
(Central Semiconductor)
2N3963 2N3964
SILICON PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3963 and 2N3964 are silicon PNP t.
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