4N80E
Motorola
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4N80 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
4N80
DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 800V(Min) ·Fast.
4N80 - N-Channel Power MOSFET
(nELL)
SEMICONDUCTOR
4N80 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
DESCRIPTION
(4A, 800Volts)
The Nell 4N80 is a three-terminal .
4N80 - N-CHANNEL POWER MOSFET
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 4N80
4.0A, 800V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N80 is a N-channel mode power MOSFET using UTC’s advance.
4N80-FC - N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
4N80-FC
4.0A, 800V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N80-FC provide excellent RDS(ON), low gate charge and .
4N80-FCQ - 800V N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD 4N80-FCQ
4.0A, 800V N-CHANNEL POWER MOSFET
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The UTC 4N80-FCQ provide excellent RDS(ON), low gate charge an.
4N80-N - N-CHANNEL POWER MOSFET
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 4N80-N
4.0A, 800V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N80-N is a N-channel mode power MOSFET using UTC’s adva.
4N03L02 - Power-Transistor
(Infineon)
OptiMOS®-T2 Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating .
4N041R1 - Power-Transistor
(Infineon)
IPLU300N04S4-1R1
OptiMOS™-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operatin.
4N04R7 - Power-Transistor
(Infineon)
IPLU300N04S4-R7
OptiMOS™-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating.
4N04R8 - Power-Transistor
(Infineon)
IPLU300N04S4-R8
OptiMOS™-T2 Power-Transistor
Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating.