Part number:
4N80E
Manufacturer:
Motorola
File Size:
142.90 KB
Description:
Mtb4n80e.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB4N80E1/D
Product Preview
TMOS E-FET .™ High Energy Power FET D 2 PAK-SL Straight L.
| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix | SIHD4N80E-GE3 | MOSFET N-CH 800V 4.3A DPAK | DigiKey | 1999 | 500 units |
$0.71
|
🛒 Buy Now |
4N80E
Motorola
142.90 KB
Mtb4n80e.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB4N80E1/D
Product Preview
TMOS E-FET .™ High Energy Power FET D 2 PAK-SL Straight L.
* elieved readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces s
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The UTC 4N80-FC provide excellent RDS(ON), low gate charge and .
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Vishay Intertechnologies
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