Download the BCY79 datasheet PDF.
This datasheet also covers the BCY78 variant, as both devices belong to the same transistor family and are provided as variant models within a single manufacturer datasheet.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BCY79. For precise diagrams, and layout, please refer to the original PDF.
MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Collector-Emitter Voltage (RBE = 10 Ohms) Emitter-Base Voltage Collector Current - Continuous @TaTotal Device Diss...
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itter-Base Voltage Collector Current - Continuous @TaTotal Device Dissipation = 25°C Derate above 25°C Total Device Dissipation @Tc = 25°C Tc = 100°C Derate above 25 °C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient VCEO VCES V£BO ic PD pd Tj- T stg Symbol R0JC R0JA BCY BCY 78 79 32 45 32 45 5 0.2 0.6 2.28 1 6.67 -65 to +200 Max 150 450 Unit Vdc Vdc Vdc Amp Watt mW/°C Watt mW/°C °C Unit °C/W °c/w BCY78 BCY79 CASE 22-03, STYLE 1 TO-18 (TO-206AA) TRANSISTOR PNP SILICON ELECTRICAL CHARACTERISTICS (Ta = 25°C un
BCY79 Datasheet
