BSX20 - NPN SILICON TRANSISTOR
MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage (RBE = 10 Ohms) Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous @TaTotal Device Dissipation = 25°C Derate above 25°C Total Device Dissipation @Tq = 25°C Tc = 100°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol VCEO VCER Value 15 20 Unit Vdc Vdc VCBO VEBO ic PD pd Tj.
T s tg 40
