epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling dio
✔ MBR2535CTL Application
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated
MBR2535CT, Sirectifier
MBR2530CT thru MBR2540CT
High Tjm Low IRRM Schottky Barrier Diodes
C(TAB)
AC A A C A
A=Anode, C=Cathode, TAB=Cathode
MBR2530CT MBR2535CT MBR2540CT.
MBR2535CT, Sangdest Microelectronics
MBR2535CT
Technical Data Data Sheet N0732 Rev. A
MBR2535CT SCHOTTKY RECTIFIER
Features
LKLLKJHYJ,
TO-220AB
150C TJ operation
Center tap confi.
MBR2535CT, JGD
Features
* Low power loss, high efficiency * Guard-ring for overvoltage protection * High surge current capability * Compliant to RoHS Directive 2011/.
MBR2535CT, Motorola
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBR2535CT/D
SWITCHMODE™ Power Rectifiers
. . . using the Schottky Barrier principle wi.