* epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity-protection diodes.
* Extremely Low vF
* High Surge Capacity
* Low Stored Charge, Ma
MBR5825H Datasheet (394.73 KB)
MBR5825H
Motorola
394.73 KB
Power rectifiers.
® MOTOROLA
IN5823,lN5824 IN5825
MBRS82S,H, H1
Designers Data Sheet
HOT CARRIER POWER RECTIFIERS
* .. employing the Schottky Barrier principle .
📁 Related Datasheet
MBR5825 POWER RECTIFIERS (Motorola)
MBR5825H1 POWER RECTIFIERS (Motorola)
MBR580 (MBR540 - MBR5200) SCHOTTKY BARRIER RECTIFIERS (Pan Jit International)
MBR580 SCHOTTKY BARRIER RECTIFIERS (E-DA SEMICONDUCTOR)
MBR580NG 5.0A Leaded Type Schottky Barrier Rectifiers (American First Semiconductor)
MBR5831 POWER RECTIFIERS (Motorola)
MBR5831H POWER RECTIFIERS (Motorola)
MBR5831H1 POWER RECTIFIERS (Motorola)
MBR500100CT Schottky Power Diode (Naina Semiconductor)
MBR500100CT Silicon Power Schottky Diode (America Semiconductor)
