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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Advance Information SWITCHMODE™ Power Rectifier
The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 Volt Blocking Voltage • Low Forward Voltage Drop • Guardring for Stress Protection and High dv/dt Capability (> 10 V/ns) • Guaranteed Reverse Avalanche • 150°C Operating Junction Temperature Mechanical Characteristics • Case: Epoxy, Molded • Weight: 4.
MBR6045 Datasheet
