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MCM67H618B 64K x 18 Bit BurstRAM Synchronous Fast Static RAM

MCM67H618B Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCM67H618B/D Advance Information MCM67H618B 64K x 18 Bit BurstRAM Synchronous Fast S.

MCM67H618B Features

* ) Output Low Voltage (IOL = + 8.0 mA) Output High Voltage (IOH =
* 4.0 mA) ISB2 ISB4 VOL VOH
* 2.4 TBD TBD 0.4 3.3 mA mA V V NOTE: Good decoupling of the local power supply should always be used. DC characteristics are guaranteed for all possible i486 and Pen

MCM67H618B Applications

* Synchronous design allows precise cycle control with the use of an external clock (K). BiCMOS circuitry reduces the overall power consumption of the integrated functions for greater reliability. Addresses (A0
* A15), data inputs (D0
* D17), and all control signals DQ9 except output

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Datasheet Details

Part number
MCM67H618B
Manufacturer
Motorola
File Size
167.98 KB
Datasheet
MCM67H618B_MotorolaInc.pdf
Description
64K x 18 Bit BurstRAM Synchronous Fast Static RAM

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64K Bit BurstRAM Synchronous Fast Static RAM Motorola
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