MCM69L736A Datasheet (Motorola) - 4M Late Write HSTL

MCM69L736A, 4M Late Write HSTL

PBGA Pin Locations 2A, 3A, 5A, 6A, 3B, 5B, 2C, 3C, 5C, 6C, 4N, 4P, 2R, 6R, 3T, 4T, 5T 4K 4L 4M 5L, 5G, 3G, 3L (a), (b), (c), (d) 4E 4F 2U 3U 4U 5U 4D 7T (a) 6K, 7K, 6L, 7L, 6M, 6N, 7N, 6P, 7P (b) 6D, 7D, 6E, 7E, 6F, 6G, 7G, 6H, 7H (c) 1D, 2D, 1E, 2E, 2F, 1G, 2G, 1H, 2H (d) 1K, 2K, 1L, 2L, 2M, 1N, 2

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCM69L736A/D Advance Information 4M Late Write HSTL The MCM69L736A/818A is a 4M synchronous late write fast static RAM designed to provide high performance in secondary cache and ATM switch, Telecom, and other high speed memory applications.

The MCM69L818A (organized as 256K words by 18 bits) and the MCM69L736A (organized as 128K words by 36 bits) are fabricated in Motorola’s high performance silicon gate BiCMOS technology.

The dif

MCM69L736A Features

* >

* Typical

* 7.5

* 300 390 190 160 140 TBD Typical

* 8.5

* 290 380 190 160 140 TBD Typical

* 9.5

* 270 360 190 160 140 TBD Typical

* 10.5

* 260 350 190 160