MD5000B - DUAL AMPLIFIED TRANSISTOR

Motorola Semiconductor (now NXP Semiconductors)

Download the MD5000B datasheet PDF. This datasheet also covers the MD5000 variant, as both devices belong to the same dual amplified transistor family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

MD5000B dual amplified transistor by Motorola Semiconductor (now NXP Semiconductors) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (MD5000-Motorola.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	MD5000B
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	36.12 KB
Description	DUAL AMPLIFIED TRANSISTOR
Datasheet	MD5000B Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MD5000B	Dual PNP Silicon Transistor	ON Semiconductor
MD5000	50A MOTOROLA TYPE PRESS-FIT DIODE	WON-TOP
MD5000	Dual PNP Silicon Transistor	ON Semiconductor
MD5000A	Dual PNP Silicon Transistor	ON Semiconductor
MD5001	50A MOTOROLA TYPE PRESS-FIT DIODE	WON-TOP

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
MD5000	DUAL AMPLIFIED TRANSISTOR
MD5000A	DUAL AMPLIFIED TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MD5000,A,B MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous @Total Device Dissipation TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol Value vCEO vCBO v EBO ic 15 20 5.0 50 One Side Both Sides PD 300 400 1.7 2.3 TJ. Tstg -65 to +200 Unit Vdc Vdc Vdc mAdc mW mW/°C °c ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) Characteristic Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Ic = 3.