MFQ930C Datasheet (Motorola) - QUAD DUAL-IN-LINE TMOS

MFQ930C, QUAD DUAL-IN-LINE TMOS

MFQ930C MFQ960C MFQ990C MAXIMUM RATINGS Rating Symbol MFQ930C MFQ960C MFQ990C CASE 632-02, STYLE 1 TO-116 QUAD DUAL-IN-LINE TMOS N-CHANNEL ENHANCEMENT Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Continuous (1) Pulsed (2) vDs vDg vgs id Idm @Total Device Dissipation T/ = 25°C Derate Above 25°C Operating and Storage Junction Temperature Range 35 60 90 35 60 90 ±30 2.0 3.0 Each Total Transistor Device PD TJ.

Tstg 0.5 17.0 2.0 66.6 - 55 to + 1