MFR9180 Datasheet (Motorola) - RF Power Field Effect Transistors

MFR9180, RF Power Field Effect Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9180/D The RF Sub Micron MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz.

The high gain and broadband performance of these devices make them ideal for large signal, common source amplifier applications in 26 volt base station equipment.

Typic

MFR9180 Features

* F9180S 7 Zo = 5 Ω f = 895 MHz Zsource Zload f = 895 MHz f = 865 MHz f = 865 MHz VDD = 26 V, IDQ = 2 × 700 mA, Pout = 170 W PEP f MHz 865 880 895 Zsource Ω 2.95 + j0.00 2.48 + j0.67 2.44 + j1.18 Zload Ω 3.83 + j1.02 3.55 + j1.38 3.34+ j1.51 Zsource = Test circuit impedance as measured from gat