Datasheet Specifications
- Part number
- MFR9180
- Manufacturer
- Motorola
- File Size
- 342.87 KB
- Datasheet
- MFR9180_Motorola.pdf
- Description
- RF Power Field Effect Transistors
Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9180/D The RF Sub *Micron MOSFET Line RF Power Field Effect Transistors N
Features
* F9180S 7 Zo = 5 Ω f = 895 MHz Zsource Zload f = 895 MHz f = 865 MHz f = 865 MHz VDD = 26 V, IDQ = 2 × 700 mA, Pout = 170 W PEP f MHz 865 880 895 Zsource Ω 2.95 + j0.00 2.48 + j0.67 2.44 + j1.18 Zload Ω 3.83 + j1.02 3.55 + j1.38 3.34+ j1.51 Zsource = Test circuit impedance as measured from gatApplications
* with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for largeMFR9180 Distributors
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