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MFR9180 RF Power Field Effect Transistors

MFR9180 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9180/D The RF Sub *Micron MOSFET Line RF Power Field Effect Transistors N

MFR9180 Features

* F9180S 7 Zo = 5 Ω f = 895 MHz Zsource Zload f = 895 MHz f = 865 MHz f = 865 MHz VDD = 26 V, IDQ = 2 × 700 mA, Pout = 170 W PEP f MHz 865 880 895 Zsource Ω 2.95 + j0.00 2.48 + j0.67 2.44 + j1.18 Zload Ω 3.83 + j1.02 3.55 + j1.38 3.34+ j1.51 Zsource = Test circuit impedance as measured from gat

MFR9180 Applications

* with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large
* signal, common
* source amplifier applications in 26 volt base station equipment.
* Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 700 mA IS
* 9

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Datasheet Details

Part number
MFR9180
Manufacturer
Motorola
File Size
342.87 KB
Datasheet
MFR9180_Motorola.pdf
Description
RF Power Field Effect Transistors

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Motorola MFR9180-like datasheet