MGV12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGV12N120D/D Product Preview Data Sheet Insulated Gate Bipolar Transistor with Anti-P.

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Datasheet Specifications

Part number: MGV12N120D
Manufacturer: Motorola
File Size: 79.93 KB
Datasheet: MGV12N120D_MotorolaInc.pdf
Description: Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Applications

* requiring a guaranteed short circuit withstand time. Fast switching characteristics result in efficient operations at high frequencies. Co
* packaged IGBTs save space, reduce assembly time and cost.
* High Power Surface Mount D3PAK Package High S

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MGV12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola

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