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MGV12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode

MGV12N120D Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGV12N120D/D Product Preview Data Sheet Insulated Gate Bipolar Transistor with Anti-P.

MGV12N120D Applications

* requiring a guaranteed short circuit withstand time. Fast switching characteristics result in efficient operations at high frequencies. Co
* packaged IGBTs save space, reduce assembly time and cost.
* High Power Surface Mount D3PAK Package High S

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Datasheet Details

Part number
MGV12N120D
Manufacturer
Motorola
File Size
79.93 KB
Datasheet
MGV12N120D_MotorolaInc.pdf
Description
Insulated Gate Bipolar Transistor with Anti-Parallel Diode

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Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola
Motorola MGV12N120D-like datasheet