Datasheet4U Logo Datasheet4U.com

MGV12N120D Datasheet - Motorola

MGV12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGV12N120D/D Product Preview Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co packaged with a soft recovery ultra fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Short circuit rated IGBTs are specifically suited for appli.

MGV12N120D Datasheet (79.93 KB)

Preview of MGV12N120D PDF

Datasheet Details

Part number:

MGV12N120D

Manufacturer:

Motorola

File Size:

79.93 KB

Description:

Insulated gate bipolar transistor with anti-parallel diode.

📁 Related Datasheet

MGV125-08 GaAs Hyperabrupt Varactor Diodes (Aeroflex)

MGV125-08 GaAs Hyperabrupt Varactor Diodes (MA-COM)

MGV125-09 GaAs Hyperabrupt Varactor Diodes (Aeroflex)

MGV125-09 GaAs Hyperabrupt Varactor Diodes (MA-COM)

MGV125-20 GaAs Hyperabrupt Varactor Diodes (Aeroflex)

MGV125-20 GaAs Hyperabrupt Varactor Diodes (MA-COM)

MGV125-21 GaAs Hyperabrupt Varactor Diodes (Aeroflex)

MGV125-21 GaAs Hyperabrupt Varactor Diodes (MA-COM)

MGV125-22 GaAs Hyperabrupt Varactor Diodes (Aeroflex)

MGV125-22 GaAs Hyperabrupt Varactor Diodes (MA-COM)

TAGS

MGV12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola

Image Gallery

MGV12N120D Datasheet Preview Page 2 MGV12N120D Datasheet Preview Page 3

MGV12N120D Distributor