MJ21196
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ21195/D
MJ21195 Silicon Power Transistors
The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
- Total Harmonic Distortion Characterized
- High DC Current Gain
- h FE = 25 Min @ IC = 8 Adc
- Excellent Gain Linearity
- High SOA: 3 A, 80 V, 1 Second
- Motorola Preferred Device
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16 AMPERE PLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 250 WATTS
CASE 1- 07 TO- 204AA (TO- 3)
MAXIMUM RATINGS
Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector- Emitter Voltage
- 1.5 V Collector Current
- Continuous Collector Current
- Peak (1) Base Current
- Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 250 400 5 400 16 30 5 250 1.43
- 65 to +200
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