* the base to emitter junction is reverse biased (VCEV), this is the recommended and specified use condition. Maximum ICEV at rated VCEV is specified at a relatively low reverse bias (1.5 Volts) both at 25°C and 100 °C. Increasing the reverse bias will give some improvement in device blocking capabil
MJE13007 Datasheet (337.80 KB)
MJE13007
Motorola
337.80 KB
Power transistor.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Designer's Data Sheet
SWITCHMODE™
MJE13007 MJF13007
POWER TRANSISTOR 8.0 .
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