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MJE13007 - POWER TRANSISTOR

Features

  • the base to emitter junction is reverse biased (VCEV), this is the recommended and specified use condition. Maximum ICEV at rated VCEV is specified at a relatively low reverse bias (1.5 Volts) both at 25°C and 100 °C. Increasing the reverse bias will give some improvement in device blocking capability. The sustaining or active region voltage requirements in switching.

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Datasheet Details

Part number MJE13007
Manufacturer Motorola
File Size 337.80 KB
Description POWER TRANSISTOR
Datasheet download datasheet MJE13007 Datasheet
Additional preview pages of the MJE13007 datasheet.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE13007/D Designer's Data Sheet SWITCHMODE™ MJE13007 MJF13007 POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.
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