MJF13007 Datasheet (Motorola)

MJF13007, POWER TRANSISTOR

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE13007/D Designer's Data Sheet SWITCHMODE™ MJE13007 MJF13007 POWER TRANSISTOR 8.0 AMPERES 400 VOLTS 80/40 WATTS NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high voltage, high speed power switching inductive circuits where fall time is critical.

It is particularly suited for 115 and 220 V switchmode applications such as Switching Regulators, Inverters, Mot

MJF13007 Features

* the base to emitter junction is reverse biased (VCEV), this is the recommended and specified use condition. Maximum ICEV at rated VCEV is specified at a relatively low reverse bias (1.5 Volts) both at 25°C and 100 °C. Increasing the reverse bias will give some improvement in device blocking capabil