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MJF13007 POWER TRANSISTOR

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Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE13007/D Designer's Data Sheet SWITCHMODE™ MJE13007 MJF13007 POWER TRANSISTOR 8.0 .

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Datasheet Specifications

Part number
MJF13007
Manufacturer
Motorola
File Size
337.80 KB
Datasheet
MJF13007_MotorolaInc.pdf
Description
POWER TRANSISTOR

Features

* the base to emitter junction is reverse biased (VCEV), this is the recommended and specified use condition. Maximum ICEV at rated VCEV is specified at a relatively low reverse bias (1.5 Volts) both at 25°C and 100 °C. Increasing the reverse bias will give some improvement in device blocking capabil

Applications

* The MJE/MJF13007 is designed for high
* voltage, high
* speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection

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