Download MMBTA70 Datasheet PDF
Motorola Semiconductor
MMBTA70
CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Emitter-Base Voltage - Collector Current Continuous Symbol v CEO VEBO 'C THERMAL CHARACTERISTICS Characteristic - Total Device Dissipation, TA = 25°C Derate above 25°C Symbol PD Storage Temperature T stg - Thermal Resistance Junction to Ambfent R 6UA "Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage d C = 1-0 m Adc, Ib = 0) Emitter-Base Breakdown Voltage (lg = 100 ^Adc, lc = 0) Collector Cutoff Current (VCB = 30 Vdc, El = 0) ON CHARACTERISTICS DC Current Gain (IC = 5.0 m Adc, Vce = 10 Vdc) Collector-Emitter Saturation Voltage (IC = 10 m Adc, Ib = 10 m Adc) SMALL-SIGNAL CHARACTERISTICS - Current-Gain Bandwidth Product d C = 5.0 m Adc, Vce = 10 Vdc, f = 100 MHz) Output Capacitance (Vcb = 10 Vdc, El...