MMDF2N06V Datasheet (Motorola)

MMDF2N06V, Dual MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF2N06V/D Product Preview TMOS V™ SO-8 for Surface Mount N Channel Enhancement Mode Silicon Gate TMOS V is a new technology designed to achieve an on resistance area product about one half that of standard MOSFETs.

This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices.

Just as with our TMOS E FET designs, TMOS V is designed to withstand high energ

MMDF2N06V Features

* of TMOS V

* On

* resistance Area Product about One

* half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology

* Faster Switching than E

* FET Predecessors G S MMDF2N06V DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS RDS(on) = 0.115 OHM TM D CASE 751