MMDF3N02HD - Dual MOSFET

Motorola

Datasheet Details

fied. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic lo.

📁 MMDF3N02HD Similar Datasheet

Other Datasheets by Motorola

Published: May 9, 2005 |