* fied. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The cir
MMDF3N02HD Datasheet (297.98 KB)
MMDF3N02HD
Motorola
297.98 KB
Dual mosfet.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMDF3N02HD/D
Designer's
™ Data Sheet
Medium Power Surface Mount Products
MMDF3N02HD.
📁 Related Datasheet
MMDF3N02HD Power MOSFET (ON Semiconductor)
MMDF3N03HD Dual MOSFET (Motorola)
MMDF3N03HD Power MOSFET (ON)
MMDF3N04HD Dual MOSFET (Motorola)
MMDF3N04HD Power MOSFET (ON Semiconductor)
MMDF3N06HD Dual MOSFET (Motorola)
MMDF3N06VL Power MOSFET (ON Semiconductor)
MMDF3200Z Dual MOSFET (Motorola)
MMDF3207 Dual MOSFET (Motorola)
MMDF3C03HD Dual MOSFET (Motorola)
