MMFT107T1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMFT107T1/D
Medium Power Field Effect Transistor
N- Channel Enhancement- Mode Silicon Gate TMOS SOT- 223 for Surface Mount
This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as switching regulators, dc- dc converters, solenoid and relay drivers. The device is housed in the SOT- 223 package which is designed for medium power surface mount applications.
- Silicon Gate for Fast Switching Speeds
- RDS(on) = 14 Ohm Max
- Low Drive Requirement
- The SOT- 223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering eliminating the possibility of damage to the die.
- Available in 12 mm Tape and Reel Use MMFT107T1 to order the 7 inch/1000 unit reel Use MMFT107T3 to order the 13 inch/4000 unit reel MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain- to- Source Voltage Gate- to- Source Voltage
- Non- Repetitive Drain...
