MMFT108T1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Field Effect Transistor
N- Channel Enhancement- Mode Logic Level SOT- 223
®
2, 4 DRAIN
TMOS FET TRANSISTOR N- CHANNEL
- ENHANCEMENT
1 GATE 3 SOURCE
1 2 3 4
CASE 318E- 04, STYLE 3 SOT- 223 (TO- 261AA)
MAXIMUM RATINGS
Rating Drain
- to- Source Voltage Gate- to- Source Voltage
- Continuous Drain Current
- Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDSS VGS ID PD 0.8 6.4 TJ, Tstg
- 65 to +150 Watts m W/°C °C Value 200 ±20 250 Unit Volts Volts m Adc
DEVICE MARKING
MT108
THERMAL CHARACTERISTICS
Thermal Resistance
- Junction- to- Ambient (1) Maximum Temperature for Soldering Purposes Maximum Time in Solder Bath RθJA TL 156 260 10 °C/W °C Sec
1. Device mounted on FR4 glass epoxy printed circuit using minimum remended foot print.
TMOS is a registered trademark of Motorola, Inc.
Motorola Small- Signal Transistors, FETs and Diodes Device Data ©...
