MMFT1N10E MEDIUM POWER MOSFET

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT1N10E/D Medium Power Field Effect Transistor N *Channel Enhancement Mode Si.

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Datasheet Specifications

Part number: MMFT1N10E
Manufacturer: Motorola
File Size: 236.41 KB
Datasheet: MMFT1N10E_MotorolaInc.pdf
Description: MEDIUM POWER MOSFET

Features

* t, (TIME) IL(t) Figure 12. Unclamped Inductive Switching Test Circuit Figure 13. Unclamped Inductive Switching Waveforms Motorola TMOS Power MOSFET Transistor Device Data 5 MMFT1N10E VGS 1400 1200 Crss C, CAPACITANCE (pF) 1000 800 600 Ciss 400 200 0 20 15 10 5 0 5 Coss Crss 10 15 20 Coss Ciss V

Applications

* in power supplies, dc
* dc converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. The device is housed in the

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MMFT1N10E MEDIUM POWER MOSFET Motorola

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