MMFT1N10E
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMFT1N10E/D
Medium Power Field Effect Transistor N- Channel Enhancement Mode Silicon Gate TMOS E- FETt
SOT- 223 for Surface Mount
This advanced E- FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and mutation modes. This new energy efficient device also offers a drain- to- source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, dc- dc converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. The device is housed in the SOT- 223 package which is designed for medium power surface mount applications.
- Silicon Gate for Fast Switching Speeds
- Low RDS(on)
- 0.25 Ω max
- The SOT- 223 Package can be Soldered Using Wave or Reflow. The Formed Leads Absorb Thermal...
