MMFT2406T1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMFT2406T1/D
Medium Power Field Effect Transistor
N- Channel Enhancement Mode Silicon Gate TMOS E- FET™ SOT- 223 for Surface Mount
This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. The device is housed in the SOT- 223 package which is designed for medium power surface mount applications.
- Silicon Gate for Fast Switching Speeds
- High Voltage
- 240 Vdc
- Low Drive Requirement
- The SOT- 223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die.
- Available in 12 mm Tape and Reel Use MMFT2406T1 to order the 7 inch/1000 unit reel. Use MMFT2406T3 to order the 13 inch/4000 unit reel.
Motorola Preferred Device
MEDIUM POWER TMOS FET 700 m A 240 VOLTS RDS(on) = 6.0 OHM
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