MMFT2955E Datasheet - Motorola

MMFT2955E MEDIUM POWER MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT2955E/D Medium Power Field Effect Transistor P Channel Enhancement Mode Silicon Gate TMOS E FETt SOT 223 for Surface Mount This advanced E FET is a TMOS medium power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed swit.

MMFT2955E Features

* 80% OF RATED VDSS VdsL = Vf + Li ⋅ dlS/dt Figure 10. Commutating Safe Operating Area (CSOA) Figure 11. Commutating Safe Operating Area Test Circuit BVDSS L VDS IL VDD t RG VDD tP t, (TIME) IL(t) Figure 12. Unclamped Inductive Switching Test Circuit Figure 13. Unclamped Inductive Switching Wav

MMFT2955E_MotorolaInc.pdf