MMFT2N02EL Datasheet - Motorola

MMFT2N02EL MEDIUM POWER MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT2N02EL/D Medium Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS E FETt SOT 223 for Surface Mount This advanced E FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts. This new energy efficient device also offers a drain .

MMFT2N02EL Features

* RATED VDSS VdsL = Vf + Li ⋅ dlS/dt VDS, DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 10. Commutating Safe Operating Area (CSOA) Figure 11. Commutating Safe Operating Area Test Circuit BVDSS L VDS IL VDD t RG VDD tP t, (TIME) IL(t) Figure 12. Unclamped Inductive Switching Test Circui

MMFT2N02EL_MotorolaInc.pdf