MPS3906 Datasheet (Motorola) - General Purpose Transistor(PNP Silicon)

MPS3906, General Purpose Transistor(PNP Silicon)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS3906/D General Purpose Transistor PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MPS3906 1 2 3 MAXIMUM RATINGS Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEB

MPS3906 Features

* egion Safe Operating Area 104 VCC = 30 V IC, COLLECTOR CURRENT (nA) 103 102 101 100 10

* 1 10

* 2 ICEO DESIGN NOTE: USE OF THERMAL RESPONSE DATA A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the