MRF18030ALSR3
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRF18030A/D
The RF MOSFET Line
RF Power Field Effect Transistors MRF18030ALR3 N
- Channel Enhancement
- Mode Lateral MOSFETs MRF18030ALSR3
Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805
- 1880 MHz.
- Typical GSM Performance: Power Gain
- 14 d B (Typ) @ 30 Watts Efficiency
- 50% (Typ) @ 30 Watts
- Internally Matched, Controlled Q, for Ease of Use
- High Gain, High Efficiency and High Linearity
- Integrated ESD Protection
- Designed for Maximum Gain and Insertion Phase Flatness
- Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 W Output Power
- Excellent Thermal Stability
- Low Gold Plating Thickness on Leads, 40µ″ Nominal.
- in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. 1.8
- 1.88 GHz, 30 W, 26 V GSM/GSM EDGE LATERAL N
- CHANNEL RF POWER...
