MRF18030ALSR3, MRF18030ALR3 RF Power Field Effect Transistors

Motorola

MRF18030ALSR3 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.Order this document by MRF18030A/D The RF MOSFET Line RF Power Field Effect T.

MRF18030ALSR3 Features

* sed on the information in this document. Motorola reserves the right to make changes wi

MRF18030ALSR3 Applications

* with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805 - 1880 MHz.
* Typical GSM Performance: Power Gain - 14 dB (Typ) @ 30 Watts Efficiency - 50% (Typ) @ 30 Watts
* Internally Matched, Controlled Q, for Ease

📥 Download Datasheet

MRF18030ALSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF18030ALSR3, MRF18030ALR3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF18030ALSR3, MRF18030ALR3
Manufacturer: Motorola
File Size: 508.05 KB
Datasheet: MRF18030ALR3_Motorola.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRF18030ALSR3, MRF18030ALR3.
Please refer to the document for exact specifications by model.

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Power Field Effect Transistors Motorola

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