MRF183S
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF183/D
The RF MOSFET Line
RF Power Field Effect Transistors
N- Channel Enhancement- Mode Lateral MOSFETs
Designed for broadband mercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large- signal, mon source amplifier applications in 28 volt base station equipment.
- Guaranteed Performance at 945 MHz, 28 Volts Output Power
- 45 Watts PEP Power Gain
- 11.5 d B Efficiency
- 33% IMD
- 28 d Bc
- Characterized with Series Equivalent Large- Signal Impedance Parameters
- S- Parameter Characterization at High Bias Levels
- Excellent Thermal Stability
- 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 28 Vdc, 945 MHz, 45 Watts CW
MRF183 MRF183S
45 W, 1.0 GHz LATERAL N- CHANNEL BROADBAND RF POWER MOSFETs
CASE 360B- 01, STYLE 1 (MRF183)
MAXIMUM RATINGS
Rating Drain- Source Voltage Drain- Gate Voltage (RGS = 1 Meg Ohm)...
