* effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit el
MTB50P03HDL Datasheet (182.06 KB)
MTB50P03HDL
Motorola
182.06 KB
Tmos power fet.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB50P03HDL/D ™ Data Sheet HDTMOS E-FET.™ High Energy Power FET D2PAK for Surface Moun.
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