MTB50P03HDL TMOS POWER FET

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB50P03HDL/D ™ Data Sheet HDTMOS E-FET.™ High Energy Power FET D2PAK for Surface Moun.

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Datasheet Specifications

Part number: MTB50P03HDL
Manufacturer: Motorola
File Size: 182.06 KB
Datasheet: MTB50P03HDL_Motorola.pdf
Description: TMOS POWER FET

Features

* effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit el

Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced high
* cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain
* to

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MTB50P03HDL TMOS POWER FET Motorola

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