MTB52N06VL Datasheet - Motorola

MTB52N06VL TMOS POWER FET

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTB52N06VL/D TMOS Power Field Effect Transistor D2PAK for Surface Mount TMOS V is a new technology designed to achieve an on resistance area product about one half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E FET designs, TMOS V is designed to withstand high energy in the avalanche and commutatio.

MTB52N06VL Features

* of TMOS V

* On

* resistance Area Product about One

* half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology

* Faster Switching than E

* FET Predecessors ™ Data Sheet V™ MTB52N06VL Motorola Preferred Device N

* Channel Enhancement

MTB52N06VL Datasheet (200.96 KB)

MTB52N06VL Datasheet Preview — Preview of MTB52N06VL PDF

Datasheet Details

Part number:

MTB52N06VL

Manufacturer:

Motorola

File Size:

200.96 KB

Description:

Tmos power fet.

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MTB52N06VL TMOS POWER FET Motorola

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