MTD6P10E TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD6P10E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mo.

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Datasheet Specifications

Part number: MTD6P10E
Manufacturer: Motorola
File Size: 261.77 KB
Datasheet: MTD6P10E_Motorola.pdf
Description: TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM

Features

* ed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switch

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

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MTD6P10E TMOS POWER FET 6.0 AMPERES 100 VOLTS RDSon 0.66 OHM Motorola

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