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MTD6P10E TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM

MTD6P10E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD6P10E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mo.

MTD6P10E Features

* ed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switch

MTD6P10E Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

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Datasheet Details

Part number
MTD6P10E
Manufacturer
Motorola
File Size
261.77 KB
Datasheet
MTD6P10E_Motorola.pdf
Description
TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM

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TMOS POWER FET 6.0 AMPERES 100 VOLTS RDSon 0.66 OHM Motorola
Motorola MTD6P10E-like datasheet