MTD6P10E Datasheet (Motorola) - TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM

MTD6P10E, TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD6P10E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mount Designer's MTD6P10E Motorola Preferred Device P Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes.

The new energy efficient design also offers a drain to source diode with a fast recovery time.

Designed for low volt

MTD6P10E Features

* ed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switch