MOTOROLA SEMICONDUCTOR~ TECHNICAL DATA Designer’s Data sheet Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS These TMOS Power FETs are designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. Silicon Gate for Fast Switching Speeds Switching Times Specified at 100°C Designer’s Data IDSS, VDS(on), VGS(th) and SOA Specified at Elevated Temperature Rugged SOA is .
