MW4IC2020MBR1 Datasheet | Motorola Semiconductor

.. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MW4IC2020/D The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip design makes it usable from 1600 to 2400 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, CDMA and W - CDMA. Final Application Typical Two - Tone Performance: VDD = 26 Volts, IDQ1 = 80 m A, IDQ2 = 200 m A, IDQ3 = 300 m A, Pout = 20 Watts PEP, Full Frequency Band Power Gain - 29 d B IMD - - 32 d Bc Drain Efficiency - 26% (at 1805 MHz) and 20% (at 1990 MHz) Driver Applications Typical GSM EDGE Performance: VDD = 26 Volts, IDQ1 = 80 m A, IDQ2 = 230 m A, IDQ3 = 230 m A, Pout = 5 Watts Avg., Full Frequency Band Power Gain - 29 d B Spectral Regrowth @ 400 k Hz Offset = - 66 d Bc Spectral Regrowth @ 600 k Hz Offset = - 77 d Bc EVM - 1% rms Typical CDMA Performance: VDD = 26 Volts, IDQ1 = 80 m A, IDQ2 = 240 m A, IDQ3 = 250 m A, Pout = 1 Watt Avg., Full Frequency Band, IS - 97 Pilot, Sync, Paging, Traffic Codes 8 through 13 Power Gain - 30 d B ACPR @ 885 k Hz Offset = - 61 d Bc @ 30 k Hz Bandwidth ALT1 @ 1.25 MHz Offset = - 69 d Bc @ 12.5 k Hz Bandwidth ALT2 @ 2.25 MHz Offset = - 59 d Bc @ 1 MHz Bandwidth - Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 8 Watts CW Output Power - Characterized with Series Equivalent Large - Signal Impedance Parameters - On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) - Integrated Temperature pensation with Enable/Disable...