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MW4IC2020MBR1 - RF LDMOS Wideband Integrated Power Amplifiers

This page provides the datasheet information for the MW4IC2020MBR1, a member of the MW4IC2020GMBR1 RF LDMOS Wideband Integrated Power Amplifiers family.

Description

10 µF, 35 V Tantalum Capacitors 220 nF Chip Capacitor (1206) 6.8 pF 100B Chip Capacitors 0.5 pF 100B Chip Capacitor 1.8 pF 100B Chip Capacitors 2.2 pF 100B Chip Capacitor 1 pF 100B Chip Capacitor 0.3 pF 100B Chip Capacitor 10 pF 100B Chip Capacitor 1.8 kW Chip Resistors (1206) Part Number TAJE226M03

Features

  • _C 1 10 100 25_C VDD = 26 Vdc IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA f = 1960 MHz (CW) 36 30 ηD, DRAIN.

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Datasheet preview – MW4IC2020MBR1

Datasheet Details

Part number MW4IC2020MBR1
Manufacturer Motorola
File Size 615.64 KB
Description RF LDMOS Wideband Integrated Power Amplifiers
Datasheet download datasheet MW4IC2020MBR1 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MW4IC2020/D The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020M wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip design makes it usable from 1600 to 2400 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, CDMA and W - CDMA.
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