Datasheet Details
- Part number
- TE53N50E
- Manufacturer
- Motorola
- File Size
- 165.49 KB
- Datasheet
- TE53N50E_Motorola.pdf
- Description
- MTE53N50E
TE53N50E Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTE53N50E/D .™ Power Field Effect Transistor N *Channel Enhancement *Mod.TE53N50E Features
* h board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 60000 VDS =TE53N50E Applications
* such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive www. DataSheet4U. com loads are switched and offer additional safety margin against unexpected voltage transients.
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