TY30N50E Datasheet (Motorola) - Power Field Effect Transistor

TY30N50E, Power Field Effect Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY30N50E/D Designer's TMOS E-FET .™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes.

This new energy efficient design also offers a drain to source diode with fast recovery time.

Designed for high voltage, high speed switching applications in power supplies, converters, PWM

TY30N50E Features

* °C 1000 Coss 100 Crss 10 10 100 VDS, DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) 1000 GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor