TY30N50E Datasheet - Motorola

TY30N50E Power Field Effect Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY30N50E/D Designer's TMOS E-FET .™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain to source diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM .

TY30N50E Features

* °C 1000 Coss 100 Crss 10 10 100 VDS, DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) 1000 GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor

TY30N50E Datasheet (193.76 KB)

TY30N50E Datasheet Preview — Preview of TY30N50E PDF

Datasheet Details

Part number:

TY30N50E

Manufacturer:

Motorola

File Size:

193.76 KB

Description:

Power field effect transistor.

📁 Related Datasheet

TY-145P 5V / 200 HZ / 1-3 (ETC)

TY4045A DIGITAL TCXO (Raltron Electronics)

TY6004 Thyristors (Silec Semiconductors)

TY72011AP2 Single Ended PWM Controller Featuring QR Operation and Soft Frequency Foldback (ON Semiconductor)

TYAL1110 Triacs (Thomson-CSF)

TYAL1110 Triacs (ETC)

TYAL1115 Triacs (Thomson-CSF)

TYAL1115 Triacs (ETC)

TAGS

TY30N50E Power Field Effect Transistor Motorola

TY30N50E Distributor