TY30N50E Power Field Effect Transistor

Motorola

TY30N50E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY30N50E/D Designer's TMOS E-FET .™ Power Field Effect Transistor N *Channel .

TY30N50E Features

* °C 1000 Coss 100 Crss 10 10 100 VDS, DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) 1000 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7a. Capacitance Variation Figure 7b. High Voltage Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor

TY30N50E Applications

* in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive www. DataSheet4U. com loads are switched and offer additional safety margin against unexpected voltage transients.

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Datasheet Details

Part number: TY30N50E
Manufacturer: Motorola
File Size: 193.76 KB
Datasheet: TY30N50E_Motorola.pdf
Description: Power Field Effect Transistor

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