SLF80R830GT Datasheet - Msemitek

SLF80R830GT 800V N-Channel MOSFET

This Power MOSFET is produced using Msemitek‘s advanced Superjunction MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

SLF80R830GT Features

* - 850V@Tj=150℃ - 6A,800V, RDS(on) =700mΩ@VGS = 10 V - Low gate charge(typ. Qg =17.7nC) - High ruggedness - Ultra fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS PD TJ, TST

SLF80R830GT Datasheet (1.02 MB)